IGBT Module are high performance semiconductor switching devices that are formed by combining input MOS and an output bipolar transistor. These are also known as Insulated Gate Bipolar Transistor and offers properties of both the combined elements such as high input impedance and high switching speeds of a MOSFET with the low saturation voltage of a bipolar transistor. IGBT Module are commonly used in power electronic devices such as converters, inverters and power supplies where the demands of the solid state switching device are not fully met by power MOSFETs. These are available in various different types and capacities as per their ratings.